ナノ構造情報のフロンティア開拓 - 材料科学の新展開

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A02（カ）計画研究

A02（カ）計画研究 原子層制御による新しい材料機能探索

  • N. Watanabe, K. Ide, J. Kim, T. katase, H. Hiramatsu, H. Hosono, and T. Kamiya, Multiple color inorganic thin-film phosphor, RE-doped amorphous gallium oxide (RE = Rare Earth: Pr, Sm, Tb, and Dy), deposited at room temperature. Phys. Status Solidi A, 1700833 (2018).
  • S. Haindl, H. Kinjo, K. Hanzawa, H. Hiramatsu, and H. Hosono, Pulsed laser deposition of SmFeAsO1–δ on MgO(100) substrates. Appl. Surf. Sci. 437, 418 (2018).
  • H. Hosono, A. Yamamoto, H. Hiramatsu, and Y. Ma, Recent advances in iron-based superconductors toward applications. Mater. Today, published online (2018).
  • K-K. Fu, R-B. Wang, T. Katase, H.Ohta, N. Koch, and S. Duhm, Stoichiometric and oxygen deficient VO2 as versatile hole injection electrode for organic semiconductors. ACS Appl. Mater. Interfaces 10, 10552 (2018).
  • Y. Zhang, B. Feng, H. Hayashi, C-P. Chang, Y-M. Sheu, I. Tanaka, Y. Ikuhara, and H.Ohta, Double thermoelectric power factor of a 2D electron system. Nature Commun. in press
  • S. Katayama, T. Katase, T. Tohei, B. Feng, Y. Ikuhara, and H.Ohta, Reactive solid-phase epitaxy and electrical conductivity of layered sodium manganese oxide films. Cryst. Growth Des. 17, 1849 (2017).
  • K. Funahashi, N. Tanaka, Y. Shoji, N. Imazu, K. Nakayama, K. Kanahashi, H. Shirae, S. Noda, H.Ohta, T. Fukushima, and T. Takenobu, Remarkably air- and moisture-stable hole-doped carbon nanotube films by a boron-based oxidant. Appl. Phys. Express 10, 035101 (2017).
  • 太田裕道, 特別記事・注目をあびるエレクトロクロミック材料とその可能性－窓ガラスがメモリーとして利用可能に－. 工業材料 65, 78-82 (2017).
  • H. Hiramatsu, H. Sato, T. Kamiya, and H. Hosono, BaFe2(As1−xPx)2 (x = 0.22–0.42) thin films grown on practical metal-tape substrates and their critical current densities. Supercond. Sci. Technol. 30, 044003 (2017).
  • K. Iida, H. Sato, C. Tarantini, J. Hänisch, J. Jaroszynski, H. Hiramatsu, B. Holzapfel, and H. Hosono, High-field transport properties of a P-doped BaFe2As2 film on technical substrate. Sci. Rep. 7, 39951 (2017).
  • N. Watanabe, J. Kim, K. Ide, H. Hiramatsu, H. Kumigashira, S. Ueda, H. Hosono, and T. Kamiya, Amorphous gallium oxide as an improved host for inorganic light-emitting thin film semiconductor fabricated at room temperature on glass ECS J. Solid State Sci. Technol. 6, P410 (2017).
  • T. Hanna, H. Hiramatsu, I. Sakaguchi, and H. Hosono, Highly hydrogen-sensitive thermal desorption spectroscopy system for quantitative analysis of low-concentration hydrogen (~1 × 1016 atoms/cm3) in thin-film samples. Rev. Sci. Instrum. 88, 053103 (2017).
  • C. A. Niedermeier, S. Rhode, K. Ide, H. Hiramatsu, H. Hosono, T. Kamiya, and M. A. Moram, Electron effective mass and mobility limits in degenerate perovskite stannate BaSnO3. Phys. Rev. B 95, 161202(R) (2017).
  • H. Tang, Y. Kishida, K. Ide, Y. Toda, H. Hiramatsu, S. Matsuishi, S. Ueda, N. Ohashi, H. Kumomi, H. Hosono, and T. Kamiya, "Multiple roles of hydrogen treatments in amorphous In–Ga–Zn–O films", ECS J. Solid State Sci. Technol. 6, P365 (2017).
  • K. Kobayashi, A. Nakao, S. Maki, J. Yamaura, T. katase, H. Sato, H. Sagayama, R. Kumai, Y. Kuramoto, Y. Murakami, H. Hiramatsu, and H. Hosono, "Structure determination in thin film Ba1–xLaxFe2As2: Relation between the FeAs4 geometry and superconductivity", Phys. Rev. B 96, 125116 (2017).
  • H. Hiramatsu, H. Yusa, R. Igarashi, Y. Ohishi, T. Kamiya, and H. Hosono, An exceptionally narrow band-gap (~4 eV) silicate predicted in the cubic perovskite structure: BaSiO3. Inorg. Chem. 56, 10535 (2017).
  • J. Wang, K. Hanzawa, H. Hiramatsu, J. Kim, N. Umezawa, K. Iwanaka, T. Tada, and H. Hosono, Exploration of stable strontium phosphide-based electrides: Theoretical structure prediction and experimental validation. J. Am. Chem. Soc. 139, 15668 (2017).
  • T. katase, K. Endo, and H. Ohta , Infrared-transmittance tunable metal-insulator conversion device with thin-film-transistor-type structure on a glass substrate. APL Mater. 5, 056105 (2017).
  • Y. Zhang, B. Feng, H. Hayashi, T. Tohei, I. Tanaka, Y. Ikuhara, and H. Ohta , Thermoelectric phase diagram of the SrTiO3-SrNbO3 solid solution system. J. Appl. Phys. 121, 185102-1-7(2017).
  • A. Khare, D. Shin, T. Yoo, M. Kim, T-D. Kang, J. Lee, S. Roh, J. Hwang, S-W. Kim, T-W. Noh, H. Ohta , and W-S. Choi, Topotactic metal-insulator transition in epitaxial SrFeOx thin films. Adv. Mater. 29, 1606566 (2017).
  • A.V. Sanchela, T. Onozato, B. Feng, Y. Ikuhara, and H. Ohta , Thermopower modulation clarification of the intrinsic effective mass in a transparent oxide semiconductor, BaSnO3. Phys. Rev. Materials 1, 034603 (2017).
  • S-P. Chiu, M. Yamanouchi, T. Oyamada, H. Ohta , and J-J. Lin, Gate tunable spin-orbit coupling and weak antilocalization effect in an epitaxial La2/3Sr1/3MnO3 thin film. Phys. Rev. B 96, 085143 (2017).
  • T. katase, Y. Suzuki, H. Ohta , Highly conducting leakage-free electrolyte for SrCoOx-based non-volatile memory device. J. Appl. Phys. 122, 135303 (2017).
  • Y. Nezu, Y. Zhang, C. Chen, Y. Ikuhara, and H. Ohta , Solid-phase epitaxial film growth and optical properties of a ferroelectric oxide, Sr2Nb2O7. J. Appl. Phys.122, 135305 (2017).
  • H. Ohta , S-W. Kim, S. Kaneki, A. Yamamoto, and T. Hashizume, High thermoelectric power factor of high-mobility two-dimensional electron gas. Adv. Sci. 4, 1700696 (2017).
  • 太田 裕道, 特別記事・注目をあびるエレクトロクロミック材料とその可能性－窓ガラスがメモリーとして利用可能に－. 工業材料（日刊工業新聞社）, 65 (1), 78-82 (2017).
  • T. katase and H. Ohta , "Transition-metal-oxide based functional thin-film device using leakage-free electrolyte", J. Ceram. Soc. Jpn. 125, 608-615 (2017). The 71st CerSJ Awards for Advancements in Ceramic Science and Technology (Dr. Katase): Review
  • 太田 裕道, 特集：電子材料の新展開 エレクトロクロミック材料とその可能性. 日本電子材料技術協会会報 48, 2-5 (2017).
  • 平松 秀典，細野秀雄, 鉄系超伝導体の薄膜成長とデバイス作製. 低温工学（公益社団法人 低温工学・超電導学会） 52（6）, 433 – 442 (2017).
  • 平松 秀典，細野秀雄, 鉄系超伝導体が開く未来. ふぇらむ（日本鉄鋼協会会報誌, 一般社団法人日本鉄鋼協会）, 22, (12)（12月号）, 707 – 716 (2017).
  • T. katase, Y. Suzuki, and H. Ohta , Reversibly switchable electromagnetic device with leakage-free electrolyte. Adv. Electron. Mater. 2, 1600044 (2016).
  • B. Feng, I. Sugiyama, H. Hojo, H. Ohta , N. Shibata, and Y. Ikuhara, Atomic structures and oxygen dynamics of CeO2 grain boundaries. Sci. Rep. 6, 20288 (2016).
  • F.-Y. Ran, Z. Xiao, H. Hiramatsu, K. Ide, H. Hosono, and T. Kamiya, SnS films prepared by H2S-free process and its p-type thin film transistor. AIP Adv. 6, 015112 (2016).
  • J. Kim, N. Miyokawa, K. Ide, Y. Toda, H. Hiramatsu, H. Hosono, and T. Kamiya, Room-temperature fabrication of light-emitting thin films based on amorphous oxide semiconductor. AIP Adv. 6, 015106 (2016).
  • J. Kim, N. Miyokawa, T. Sekiya, K. Ide, Y. Toda, H. Hiramatsu, H. Hosono, and T. Kamiya, Ultrawide bandgap amorphous oxide semiconductor, Ga-Zn-O. Thin Solid Films 614, 84 (2016).
  • T. Inoue, H. Hiramatsu, H. Hosono, and T. Kamiya, Nonequilibrium rock-salt-type Pb-doped SnSe with high carrier mobilities ≈ 300 cm2/(Vs). Chem. Mater. 28, 2278 (2016).
  • N. Li, T. katase, Y. Zhu, T. Matsumoto, T. Umemura, Y. Ikuhara, and H. Ohta , Solid-liquid phase epitaxial growth of Li4Ti5O12 thin film. Appl. Phys. Express 9, 125501 (2016).
  • J. Pu, K. Kanahashi, N. T. Cuong, C-H. Chen, L-J. Li, S. Okada, H. Ohta , and T. Takenobu, "Enhanced thermoelectric power in two-dimensional transition metal dichalcogenide monolayers", Phys. Rev. B 94, 014312 (2016).
  • <T. katase, T. Onozato, M. Hirono, T. Mizuno, and H. Ohta , A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry. Sci. Rep. 6 , 25819 (2016).
  • K. Yokoyama, S. Yokoyama, Y. Sato, K. Hirano, S. Hashiguchi, K. Motomiya, H. Ohta , H. Takahashi, K. Tohji, and Y. Sato, Efficiency and long-term durability of nitrogen-doped single-walled carbon nanotube electrocatalyst synthesized by defluorination-assisted nanotube-substitution for oxygen reduction reaction. J. Mater. Chem. A 4, 9184 (2016).
  • T. Onozato, T. katase, A. Yamamoto, S. Katayama, K. Matsushima, N. Itagaki, H. Yoshida, and H. Ohta , "Optoelectronic properties of valence-state-controlled amorphous niobium oxide", J. Phys. Condens. Mater. 28, 255001 (2016).
  • T. Hatakeyama, H. Sato, H. Hiramatsu, T. Kamiya, and H. Hosono, Novel solid-phase epitaxy for multi-component materials with extremely high vapor pressure elements: An application to KFe2As2. Appl. Phys. Express 9, 055505 (2016).
  • K. Hanzawa, H. Sato, H. Hiramatsu, T. Kamiya, and H. Hosono, Electric field-induced superconducting transition of insulating FeSe thin film at 35 K. Proc. Natl. Acad. Sci. USA 113, 3986 (2016).
  • T. Inoue, H. Hiramatsu, H. Hosono, and T. Kamiya, Nonequilibrium rock-salt-type Pb-doped SnSe with high carrier mobilities ≈ 300 cm2/(Vs). Chem. Mater. 28, 2278 (2016).
  • Y. Hinuma, T. Hatakeyama, Y. Kumagai, L. A. Burton, H. Sato, Y. Muraba, S. Iimura, H. Hiramatsu, I. Tanaka, H. Hosono, and F. Oba, Discovery of earth-abundant nitride semiconductors by computational screening and high-pressure synthesis. Nat. Commun. 7, 11962 (2016).
  • J. Kim, N. Miyokawa, K. Ide, H. Hiramatsu, H. Hosono, and T. Kamiya, Transparent amorphous oxide semiconductor thin film phosphor, In-Mg-O:Eu. J. Ceram. Soc. Jpn. 124, 532 (2016).
  • J. Kim, N. Miyokawa, T. Sekiya, K. Ide, Y. Toda, H. Hiramatsu, H. Hosono, and T. Kamiya, Ultrawide bandgap amorphous oxide semiconductor, Ga-Zn-O. Thin Solid Films 614, 84 (2016).
  • C. A. Niedermeier, S. Rhode, S. Fearn, K. Ide, M. A. Moram, H. Hiramatsu, H. Hosono, and T. Kamiya, Solid phase epitaxial growth of high mobility La:BaSnO3 thin films co-doped with interstitial hydrogen. Appl. Phys. Lett. 108, 172101 (2016).
  • S. Haindl, S. Molatta, H. Hiramatsu, and H. Hosono, Recent progress in pulsed laser deposition of iron based superconductors. J. Phys. D: Appl. Phys. 49, 345301 (2016).
  • S. Haindl, K. Hanzawa, H. Sato, H. Hiramatsu, and H. Hosono, In-situ growth of superconducting SmO1–xFxFeAs thin films by pulsed laser deposition. Sci. Rep. 6, 35797 (2016).
  • H. Sato, H. Hiramatsu, T. Kamiya, and H. Hosono, Enhanced critical-current in P-doped BaFe2As2 thin films on metal substrates arising from poorly aligned grain boundaries. Sci. Rep. 6, 36828 (2016).
  • K. Hanzawa, H. Sato, H. Hiramatsu, T. Kamiya, and H. Hosono, Relationship between surface degradation and electric field-induced superconductivity for insulator-like FeSe epitaxial films. AMTC Letters 5, 214 (2016).
  • Y. Yamaguchi, K. Hanzawa, T. Hanna, Y. Toda, S. Matsuishi, H. Hiramatsu, and H. Hosono, Difference in electronic structures of superconducting and insulator-like FeSe epitaxial films. AMTC Letters 5, 216 (2016).
  • H. Kinjo, H. Sato, H. Hiramatsu, T. Kamiya, and H. Hosono, Vortex pinning properties of slightly over-doped BaFe2As2:P epitaxial films. AMTC Letters 5, 212 (2016).
  • T. katase, K. Endo, T. Tohei, Y. Ikuhara, and H. Ohta , Room-temperature-protonation-driven on-demand metal-insulator conversion of a transition metal oxide. Adv. Electron. Mater. 1, 1500063 (2015).
  • H. Sato, H. Hiramatsu, T. Kamiya, and H. Hosono, Vortex pinning property of phosphorous-doped BaFe2As2 epitaxial films: Comparison between (La,Sr)(Al,Ta)O3 and MgO substrates. IEEE Trans. Appl. Supercond. 25, 7500305 (2015).
  • T. katase, K. Endo, and H. Ohta , Characterization of electronic structure around metal-insulator transition in V1-xWxO2 thin films by thermopower measurement. J. Ceram. Soc. Jpn. 123, 307 (2015).
  • W. S. Choi, H. K. Yoo, and H. Ohta , Polaron transport and thermoelectric behavior in La-doped SrTiO3 thin films with elemental vacancies. Adv. Funct. Mater. 25, 799 (2015).
  • T. katase, K. Endo, T. Tohei, Y. Ikuhara, and H. Ohta , Room-temperature-protonation-driven on-demand metal-insulator conversion of a transition metal oxide. Adv. Electron. Mater. 1, 1500063 (2015).
  • K. Yokoyama, Y. Sato, K. Hirano, H. Ohta , M. Kenichi, K. Tohji, Y. Sato, Defluorination-assisted nanotube-substitution reaction with ammonia gas for synthesis of nitrogen-doped single-walled carbon nanotubes. Carbon 94, 1052 (2015).
  • T. katase, K. Endo, and H. Ohta , Thermopower analysis of metal-insulator transition temperature modulations in vanadium dioxide thin films with lattice distortion. Phys. Rev. B 92, 035302 (2015).
  • T. katase, K. Endo, and H. Ohta , Characterization of electronic structure around metal-insulator transition in V1-xWxO2 thin films by thermopower measurement.J. Ceram. Soc. Jpn. 123, 307 (2015).
  • H. Sato, H. Hiramatsu, T. Kamiya, and H. Hosono, Vortex pinning property of phosphorous-doped BaFe2As2 epitaxial films: Comparison between (La,Sr)(Al,Ta)O3 and MgO substrates. IEEE Trans. Appl. Supercond. 25, 7500305 (2015).
  • T. Inoue, H. Hiramatsu, H. Hosono, and T. Kamiya Heteroepitaxial growth of SnSe films by pulsed laser deposition using Se-rich targets. J. Appl. Phys. 118, 205302 (2015).
  • T. katase, K. Endo, and H. Ohta , Thermopower analysis of the electronic structure around metal-insulator transition in V1-xWxO2. Phys. Rev. B 90, 161105(R) (2014).
  • W. S. Choi, H. Ohta , and H. N. Lee, Thermopower enhancement by fractional layer control in 2D oxide superlattices. Adv. Mater. 26, 6701 (2014).
  • H. Hiramatsu, S. Matsuda, H. Sato, T. Kamiya, and H. Hosono, Growth of c-Axis-oriented superconducting KFe2As2 thin films. ACS Appl. Mater. Interfaces 6, 14293 (2014).
  • H. Sato, H. Hiramatsu, T. Kamiya, and H. Hosono, High critical-current density with less anisotropy in BaFe2(As,P)2 epitaxial thin films: Effect of intentionally grown c-axis vortex-pinning centers. Appl. Phys. Lett. 104, 182603 (2014).
  • H. Hiramatsu, H. Sato, T. katase, T. Kamiya, and H. Hosono, Critical factor for epitaxial growth of cobalt-doped BaFe2As2 films by pulsed laser deposition. Appl. Phys. Lett. 104, 172602 (2014).
  • H. Yamaguchi, H. Hiramatsu, H. Hosono, and T. Mizoguchi, The atomic structure, band gap, and electrostatic potential at the (112)[110] twin grain boundary of CuInSe2. Appl. Phys. Lett. 104, 153904 (2014).